Semiconductor laser device, photoelectric converter, and optical information processing unit

ABSTRACT

A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.

RELATED APPLICATION DATA

This application is a continuation of U.S. patent application Ser. No.15/397,023 filed Jan. 3, 2017, which is a continuation of U.S. patentapplication Ser. No. 14/993,737 filed Jan. 12, 2016, now U.S. Pat. No.9,577,404 issued Feb. 21, 2017, which is a continuation of U.S. patentapplication Ser. No. 14/219,393 filed Mar. 19, 2014, now U.S. Pat. No.9,270,081 issued Feb. 23, 2016, which is a continuation of U.S. patentapplication Ser. No. 13/616,261 filed Sep. 14, 2012, now U.S. Pat. No.8,724,670 issued May 13, 2014, the entireties of which are incorporatedherein by reference to the extent permitted by law. The presentapplication claims the benefit of priority to Japanese PatentApplication No. JP 2011-224950 filed on Oct. 12, 2011 in the JapanPatent Office, the entirety of which is incorporated by reference hereinto the extent permitted by law.

BACKGROUND

The technology relates to a semiconductor laser device having a mesasection, and also to a photoelectric converter and an opticalinformation processing unit each having the semiconductor laser device.

In recent years, as microprocessor units (MPUs) have become moresophisticated in functionality, the amount of data transmitted andreceived among semiconductor chips such as large scale integration (LSI)has greatly increased. Thus, speed enhancement and capacity enlargementof signal transmission have been strongly desired. As a way of realizingthese, optical transmission coupling technology (opticalinterconnection) in which electric signals are converted into opticalsignals and transmitted has been attracting attention (for example, see“Encounter with Optical Interconnection”, Nikkei Electronics, Dec. 3,2001, pages 122 to 125, FIGS. 4 to 7, and also, see “Trends in OpticalInterconnection Technology and their Impact on Next-Generation EquipmentPackaging”, Yasuhiro Ando, NTT R&D, Vol. 48, No. 3, pages 271 to 280(1999)).

In the optical transmission coupling technology (opticalinterconnection), a light-emission device (e.g., a surface-emittingsemiconductor laser device) and a photodetector (e.g., a photodiode) areprovided on a printed circuit board, and optical signals are transmittedthrough an optical waveguide (see Japanese Unexamined Patent ApplicationPublication Nos. 2005-181610, 2006-237428, and 2006-258835, forexample).

This surface-emitting semiconductor laser (vertical cavity surfaceemitting laser (VCSEL)) device serving as the light-emission device has,for example, an n-side electrode, a lower distributed bragg reflector(DBR) layer, an active layer, an upper DBR layer, and a p-side electrodein this order from a substrate side. Further, a mesa section is providedin a part of the surface-emitting semiconductor laser. This mesa sectionis embedded in an insulating layer made of resin. In other words, a topsurface of such a laminated body is flat, which enables flip-chipassembly (see, for example, Japanese Unexamined Patent ApplicationPublication No. 2010-141087).

SUMMARY

The semiconductor laser device described above has a disadvantage thatthe emission lifetime is shorter than that of a laser device that is notprovided with the insulating layer.

It is desirable to provide a semiconductor laser device that enablesflip-chip assembly by providing an embedding section around a mesasection, and has an improved emission lifetime. It is also desirable toprovide a photoelectric converter and an optical information processingunit each having the semiconductor laser device.

According to an embodiment of the technology, there is provided asemiconductor laser device that includes: a mesa section including anactive layer, and having a first electrode on a top surface; anembedding section covering the mesa section, and having a firstconnection aperture that reaches the first electrode; and a first wiringprovided on the embedding section to be laid across the first connectionaperture, the first wiring being electrically connected to the firstelectrode through the first connection aperture. Specifically, the firstwiring extends on both sides of the first connection aperture, and has alength equal to or longer than a radius of the columnar mesa section.

In a semiconductor laser device, thermal expansion of an embeddingsection occurs due to heat produced upon activation or a change in theambient temperature. In the above-described embodiment, however, sincethe first wiring is provided to be laid across both sides of the firstconnection aperture, stress exerted on the mesa section due to adifference in coefficient of thermal expansion between the embeddingsection and the first wiring is substantially offset on both sides ofthe first connection aperture.

According to an embodiment of the technology, there is provided aphotoelectric converter including a semiconductor laser device. Thesemiconductor laser device includes: a mesa section including an activelayer, and having a first electrode on a top surface; an embeddingsection covering the mesa section, and having a first connectionaperture that reaches the first electrode; and a first wiring providedon the embedding section to be laid across the first connectionaperture, the first wiring being electrically connected to the firstelectrode through the first connection aperture.

According to an embodiment of the technology, there is provided anoptical information processing unit including a semiconductor laserdevice and a photodetector of receiving light emitted from thesemiconductor laser device. The semiconductor laser device includes: amesa section including an active layer, and having a first electrode ona top surface; an embedding section covering the mesa section, andhaving a first connection aperture that reaches the first electrode; anda first wiring provided on the embedding section to be laid across thefirst connection aperture, the first wiring being electrically connectedto the first electrode through the first connection aperture.

According to the semiconductor laser device, the photoelectricconverter, and the optical information processing unit in theabove-described embodiments of the technology, the first wiring isprovided to be laid across the first connection aperture. Thus, exertionof stress in a biased direction on the mesa section is allowed to besuppressed. Therefore, deterioration of the active layer due to thermalexpansion of the embedding section is prevented, which allows animprovement in emission lifetime.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary, and are intended toprovide further explanation of the technology as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate embodiments and,together with the specification, serve to explain the principles of thetechnology.

FIGS. 1A and 1B are diagrams each illustrating a configuration of asemiconductor laser device in a photoelectric converter according to anembodiment of the disclosure.

FIGS. 2A and 2B are diagrams illustrating a method of manufacturing thephotoelectric converter depicted in FIGS. 1A and 1B, in a process order.

FIGS. 3A and 3B are diagrams illustrating a process following theprocess of FIGS. 2A and 2B.

FIGS. 4A and 4B are diagrams illustrating a process following theprocess of FIGS. 3A and 3B.

FIGS. 5A and 5B are diagrams illustrating a process following theprocess of FIGS. 4A and 4B.

FIGS. 6A and 6B are diagrams illustrating a process following theprocess of FIGS. 5A and 5B.

FIGS. 7A and 7B are diagrams illustrating a process following theprocess of FIGS. 6A and 6B.

FIGS. 8A and 8B are diagrams illustrating a process following theprocess of FIGS. 7A and 7B.

FIGS. 9A and 9B are diagrams illustrating a process following theprocess of FIGS. 8A and 8B.

FIGS. 10A and 10B are diagrams illustrating a process following theprocess of FIGS. 9A and 9B.

FIGS. 11A and 11B are diagrams illustrating a process following theprocess of FIGS. 10A and 10B.

FIGS. 12A and 12B are diagrams each illustrating a configuration of asemiconductor laser device according to a comparative example.

FIGS. 13A and 13B are diagrams each illustrating a configuration of asemiconductor laser device according to a modification.

FIG. 14 is a cross-sectional diagram illustrating a configuration of anoptical information processing unit according to an application exampleof the photoelectric converter depicted in FIGS. 1A and 1B.

DETAILED DESCRIPTION

An embodiment of the technology will be described below in detail withreference to the drawings. It is to be noted that the description willbe provided in the following order.

1. Embodiment

An example in which a first wiring is provided to be laid across a firstconnection aperture

2. Modification

An example in which, besides the first wiring, a second wiring is alsoprovided to be laid across a second connection aperture

3. Application Example

An example of an optical information processing unit

Embodiment

FIGS. 1A and 1B illustrate a structure of a surface-emittingsemiconductor laser device (a semiconductor laser device 2) of aphotoelectric converter (a photoelectric converter 1) according to anembodiment of the disclosure. A plurality of semiconductor laser devices2 is disposed in the photoelectric converter 1. The photoelectricconverter 1 is a light emitting unit that converts an inputted electricsignal into an optical signal and transmits the optical signal. Thephotoelectric converter 1 combined with a photoreceiver (aphotodetector) serves as an optical information processing unit (e.g.,an optical information processing unit 3 in FIG. 14, which will bedescribed later). FIG. 1A illustrates a configuration of a top surfaceof the semiconductor laser device 2, and FIG. 1B illustrates across-sectional configuration taken along a line B-B in FIG. 1A. Thephotoelectric converter 1 may be configured using the one (single)semiconductor laser device 2.

The semiconductor laser device 2 includes a laminated body 20, aninsulating layer 31, wirings (a p-side wiring 41 and an n-side wiring42), a passivation layer 51, under bump metal (UBM) layers 61 and 62,and solder bumps 71 and 72 in this order on a substrate 11. Thelaminated body 20 includes an active layer 24. The solder bumps 71 and72 are provided for flip-chip assembly on, for example, an interposer,to establish electrical connection thereto. The semiconductor laserdevice 2 receives a signal from a control semiconductor chip mounted onthe interposer, and outputs a laser beam from the substrate 11 side.

The substrate 11 is a light transmissive substrate (a transparentsubstrate), and configured using, for example, a glass substrate, aresin substrate, or a sapphire substrate. The substrate 11 made of thesapphire substrate is superior in terms of heat dissipation. Provided ona surface of this substrate 11 is a base 12, and the laminated body 20is disposed on this base 12. The base 12 and the laminated body 20 havethe respective surfaces facing each other, and these surfaces have thesame shape, for example, a square. As will be described later, this base12 makes it possible to easily transfer a desired number of thelaminated bodies 20 from a device formation substrate (a deviceformation substrate 29A in FIG. 2B) to the substrate 11. The laminatedbodies 20 are densely formed on the device formation substrate. Thesubstrate 11 has a thickness (a thickness in a lamination direction,which will be hereinafter simply referred to as “thickness”) of, forexample, about 500 μm. The base 12 has a height of, for example, about 1μm to 10 μm. On an undersurface (a back side) of the substrate 11, alens 13 (a collimate lens) is provided at a position facing the activelayer 24 (the laminated body 20). The lens 13 outputs parallel lightafter changing light coming from the active layer 24 to the parallellight. The lens 13 has a diameter of, for example, about 240 μm. Thecenter of the base 12 is at the same position as the center of the lens13 in a planar view.

The laminated body 20 includes an N—GaAs layer 21, a lower DBR layer 22(a first multilayer reflective film), the active layer 24, an upper DBRlayer 25 (a second multilayer reflective film), and a p-side electrode26 (a first electrode) in this order from the substrate 11 side. Acolumnar mesa section 20M is provided above a part of the lower DBRlayer 22 of the laminated body 20 (in an upper part of the lower DBRlayer 22, the active layer 24, the upper DBR layer 25, and the p-sideelectrode 26). The p-side electrode 26 is provided on a top surface ofthe mesa section 20M, and an n-side electrode 23 (a second electrode)paired with the p-side electrode 26 is provided around the mesa section20M. The n-side electrode 23 may be provided one, or more than one. Thep-side electrode 26 and the n-side electrode 23 are in contact with anupper part of the upper DBR layer 25 and a lower part of the lower DBRlayer 22, respectively. The laminated body 20 is configured by coveringthe mesa section 20M and the n-side electrode 23 with an insulatinglayer 27 (a first insulating layer). In other words, the mesa section20M is protected by being embedded in the insulating layer 27, and thelaminated body 20 is shaped like a pillar (a square pole) with a flattop surface, which enables flip-chip assembly. In a planar view, themesa section 20M is, for example, a circle having a diameter of about 42μm, and the laminated body 20 is, for instance, a square measuring about46 μm per side. The center of the circle of the mesa section 20M and thecenter of the square of the laminated body 20 are substantially at thesame position.

The insulating layer 27 is configured using resin, and is made of, forexample, a polyimide. The insulating layer 27 has a connection aperture28HA and a connection aperture 28HB reaching the p-side electrode 26 andthe n-side electrode 23, respectively. The connection aperture 28HA isprovided to electrically connect the p-side electrode 26 to the p-sidewiring 41, and the connection aperture 28HB is provided to electricallyconnect the n-side electrode 23 to the n-side wiring 42. The connectionaperture 28HA is provided at one location in the center of the mesasection 20M (the laminated body 20), and the connection aperture 28HB isprovided at each of two locations, namely, near each of two corners ofthe laminated body 20. The two connection apertures 28HB are providedalong a diagonal line on the top surface of the laminated body 20. It ispreferable that the connection apertures 28HB be symmetric with respectto a central point of the mesa section 20M. This is because, of then-side wiring 42, regions (counter regions 42A described later) facingeach other immediately above the laminated body 20 can be provided tohave point symmetry.

The n-side electrode (a cathode electrode) 23 is provided to apply avoltage to the lower DBR layer 22, the active layer 24, and the upperDBR layer 25, with the p-side electrode (an anode electrode) 27. Then-side electrode 23 is configured by laminating, for example, germanium(Ge), gold (Au), nickel (Ni), and gold in this order. The N—GaAs layer21 is an n-type GaAs layer. The lower DBR layer 22 is a layer in which ahigh refractive index layer and a low refractive index layer arelaminated alternately. The lower DBR layer 22 is, for example, an n-typeAlGaAs layer. The active layer 24 has a quantum well structure, andincludes, for example, a GaAs layer and an AlGaAs layer as a well layerand a barrier layer. The upper DBR layer 25 is a layer in which a lowrefractive index layer and a high refractive index layer are laminated,like the lower DBR layer 22. The upper DBR layer 25 is, for example, ap-type AlGaAs layer. Of the upper DBR layer 25, a part in proximity tothe active layer 24 is provided with an oxidation confinement section25A that has a current confinement function. The oxidation confinementsection 25A is shaped like a ring, and provided on an outer edge of theupper DBR layer 25, and thereby a current injection region is formed ina central part. The oxidation confinement section 25A is configured toinclude, for example, aluminum oxide (Al₂O₃). The p-side electrode 26has, for example, a laminated structure of titanium (Ti), platinum (Pt),nickel, and gold. The laminated body 20 as a whole has a thickness of,for example, about 6 μm.

The insulating layer 31 (a second insulating layer) covers the laminatedbody 20 by being provided on the top surface of the laminated body 20and a space between the laminated bodies 20 adjacent to each other. Theinsulating layer 31 is made of resin, e.g. a polyimide, and has athickness of about 10 to 15 μm. The insulating layer 31 has connectionapertures 31HA and 31HB provided at the same positions as those of theconnection apertures 28HA and 28HB, respectively, in a planar view. Theconnection apertures 31HA and 31HB each have, for example, a diameter ofabout 10 μm. The embedding section of the technology is configured usingthe insulating layer 31 and the above-described insulating layer 27. Thefirst connection aperture of the technology is equivalent to each of theconnection apertures 31HA and 28HA, and the second connection apertureaccording to an embodiment of the technology is equivalent to each ofthe connection apertures 31HB and 28HB.

The p-side wiring 41 and the n-side wiring 42 are provided on theinsulating layer 31. The p-side wiring 41 electrically connects thep-side electrode 26 to the solder bump 71 (the UBM layer 61), and then-side wiring 42 electrically connects the n-side electrode 23 to thesolder bump 72 (the UBM layer 62). The p-side wiring 41 has a counterregion 41A directly above the laminated body 20. In the p-side wiring 41of the present embodiment, an excess wiring section 41B is provided inthis counter region 41A. The excess wiring section 41B is a part of thecounter region 41, the part extending from the connection aperture 31HAin a direction opposite to the bump 71 (180 degrees opposite). In otherwords, the p-side wiring 41 is provided to extend from the solder bump71 beyond the connection aperture 31HA and to be laid across both sides(the solder bump 71 side and the other side) of the connection aperture31HA. One end (the other side of the solder bump 71) of the excesswiring section 41B is not connected to other terminal, and a signal isinputted into the p-side wiring 41 from only the solder bump 71 side. Aswill be described later in detail, this excess wiring section 41B makesit possible to suppress deterioration of the mesa section 20M embeddedin the insulating layer 31. In order to further improve an effect ofsuppressing the deterioration of the mesa section 20M, it is preferablethat the excess wiring region 41B have a length equal to or longer thanthe radius of the mesa section 20M. More preferably, the counter region41A is shaped to have substantially point symmetry with respect to apoint at the center of the mesa section 20M. In other words, the p-sidewiring 41 extends to have a length equal to or longer than the radius ofthe mesa section 20M, on each of both sides of the connection aperture31HA. Like the p-side wiring 41, the n-side wiring 42 also has a counterregion 42A directly above the laminated body 20. The n-side wiring 42has the two counter regions 42A, because the insulating layer 31 (theinsulating layer 27) is provided with the two connection apertures 31HB(28HB). In the n-side wiring 42, the two counter regions 42A areprovided to have substantially point symmetry with respect to a point atthe center of the mesa section 20M. Although the n-side wiring 42 isprovided only on one side of the connection aperture 31HB, the effect ofsuppressing the deterioration of the mesa section 20M is furtherimproved by thus providing the counter region 42A. It is to be notedthat the “substantially point symmetry” mentioned above may be at anylevel as long as the effect of suppressing the deterioration of the mesasection 20M is achieved. In other words, errors and the like inmanufacturing are included therein. The p-side wiring 41 and the n-sidewiring 42 are disposed to be level with each other, and each have, forexample, a layered structure including a titanium (Ti) layer having athickness of about 50 nm and a copper (Cu) layer having a thickness ofabout 1,000 nm.

The passivation layer 51 has a thickness of, for example, about 2 μm,and is made of polyimide. The passivation layer 51 has an opening of,for example, about 60 μm in diameter at a starting point of each of thep-side wiring 41 and the n-side wiring 42. At this opening of thepassivation layer 51, each of the UBM layers 61 and 62 of about 80 μm indiameter, for example, is provided. The UBM layers 61 and 62 are eachconfigured using, for example, a gold (Au) layer having a thickness ofabout 50 nm and a nickel (Ni) layer having a thickness of about 5 μm.The solder bumps 71 and 72 are each made of, for example, an alloy oftin (Sn), silver (Ag), and copper (Cu), and provided on the UBM layers61 and 62, respectively. The UBM layers 61 and 62 as well as the solderbumps 71 and 72 are provided, for example, on a diagonal line of thelaminated body 20.

A method of manufacturing the photoelectric converter 1 having thesemiconductor laser devices 2 will be described using FIG. 2A to FIG.11B. FIGS. 2A, 3A, 4A, 5A, 6A, 7A, 9A, 10A, 11A, and Part (A) of FIG. 8each illustrate a plan view of each process. FIG. 2B illustrates across-sectional diagram taken along a line B-B illustrated in FIG. 2A,and FIGS. 3B, 4B, 5B, 6B, 7B, 8B, 10B, FIG. 11B, and Part (B) of FIG. 8illustrate likewise.

First, for example, each of the laminated bodies 20 is formed on thedevice formation substrate 29A. The laminated body 20 is formed, forexample, as follows. On the device formation substrate 29A made ofgallium arsenide (GaAs), crystal growth of each of an n-type GaAs layer,an n-type AlGaAs layer, an i-GaAs layer, and a p-type AlGaAs layer iscaused in this order, for instance. Subsequently, the devices areseparated by photolithography and etching and also, the mesa section 20Mis formed. At this moment, an AlAs layer is formed in a part of thep-type AlGaAs layer, the part being on the GaAs layer side. Theoxidation confinement section 25A is formed by oxidizing this AlAslayer. Next, after the p-side electrode 26 and the n-side electrode 23are provided, the insulating layer 27 is formed. A reduction in cost isallowed by forming the semiconductor laser devices 2 on the deviceformation substrate 29A as densely as possible.

After the laminated bodies 20 are provided on the device formationsubstrate 29A, the insulating layer 27 (on the p-side electrode 26 side)is caused to be in contact with a supporting substrate 29B having asurface provided with an adhesive layer 29C, and thereby the laminatedbody 20 is fixed, as illustrated in FIGS. 2A and 2B. The deviceformation substrate 29A is then removed by etching. The supportingsubstrate 29B is, for example, a quartz substrate, and the adhesivelayer 29C is made of, for example, silicone resin.

Meanwhile, the substrate 11 having the base 12 and the lens 13 isprepared (FIGS. 3A and 3B). It is preferable that a protection wall 14used to protect the lens 13 be provided on the substrate 11. The base 12can be formed by etching, when the substrate 11 is, for example, atransparent substrate made of a material such as glass. Alternatively,the base 12 can be formed by injection molding, when the substrate 11is, for example, a resin substrate. Still alternatively, the base 12 maybe formed by photolithography and etching, after a resin layer made ofUV-curable resin such as acrylic resin, polyimide, or spin-on-glass(SOG) is formed on the substrate 11. At this moment, a space between thebases 12 next to each other is greater than that between the laminatedbodies 20 next to each other on the supporting substrate 29B (the deviceformation substrate 29A). The lens 13 and the protection wall 14 can beformed highly precisely with enhanced yields, by application of asemiconductor manufacture process at a wafer level. Specifically, atechnique such as a three-dimensional-shape molding technique based onthree-dimensional exposure technology using a gray mask may be applied.

Next, an adhesive layer 15 is provided on a surface (a surface on thebase 12 side) of the substrate 11, as illustrated in FIGS. 4A and 4B.Subsequently, the laminated bodies 20 held by the supporting substrate29B are pressed against this adhesive layer 15. The adhesive layer 15 isformed on the entire surface of the substrate 11 including the base 12,by applying a UV-curable resin, for instance, through coating such asspin coating. The laminated bodies 20 are abutted thereon before thisUV-curable resin hardens. At this moment, a bearing surface of the base12 is slightly higher than a surface around the base 12, and among thelaminated bodies 20 held by the supporting substrate 29B, only those inregions facing the bases 12 are in contact with the adhesive layer 15 ofthe substrate 11. This thins out the laminated bodies 20 on thesupporting substrate 29B, allowing a desired number of the laminatedbodies 20 to be transferred to the substrate 11. In other words, thelaminated bodies 20 are allowed to be formed on the device formationsubstrate 29A efficiently (densely), which enables the semiconductorlaser devices 2 to be formed at low cost.

After the laminated bodies 20 are caused to be in contact with theadhesive layer 15, the adhesive layer 15 is cured and thereby thelaminated bodies 20 on the base 12 are fixed. When the adhesive layer 15is made of the UV-curable resin, ultraviolet rays are irradiated fromthe back side of the substrate 11, for example, I-rays are irradiatedfor about 60 seconds. Next, as illustrated in FIGS. 5A and 5B, when thesupporting substrate 29B and the substrate 11 are gently separated fromeach other, only the laminated bodies 20 facing the bases 12 are adheredand fixed to the substrate 11. The laminated bodies 20, except thosefixed to the substrate 11, remain held by the supporting substrate 29B,and are used in or after the next transfer.

After the laminated bodies 20 are provided on the bases 12, theinsulating layer 31 is formed as illustrated in FIGS. 6A and 6B.Subsequently, the connection apertures 31HA (28HA) and 31HB (28HB) areformed in the insulating layer 31 and the insulating layer 27, asillustrated in FIGS. 7A and 7B.

After the connection apertures 31HA (28HA) and 31HB (28HB) are formed,the p-side wiring 41 and the n-side wiring 42 are formed as illustratedin Part (A) and Part (B) of FIG. 8. The p-side wiring 41 and the n-sidewiring 42 are formed, for example, by forming a film of a titanium layerhaving a thickness of about 50 nm and a copper layer having a thicknessof about 1,000 nm in this order on the insulating layer 31 bysputtering, and then patterning this film. The p-side wiring 41 and then-side wiring 42 are provided with substantially circular or ovalportions used to establish connection to the solder bumps 71 and 72 (theUBM layers 61 and 62). These circular or oval portions are provided atparts away from a location directly above each of the laminated bodies20. The p-side wiring 41 and the n-side wiring 42 have extensions fromthese portions to the connection apertures 31HA and 31HB. Further, theexcess wiring section 41B is formed in the p-side wiring 41. This excesswiring section 41B is provided to suppress the deterioration of the mesasection 20M as described above. It is preferable that the excess wiringsection 41B be formed so that the counter region 41A has point symmetry.However, the excess wiring section 41B may be of any length (size) aslong as the length allows achievement of the effect. It is desirablethat the n-side wiring 42 be formed so that, besides the counter regions42A, the neighborhood of the n-side wiring 42 have point symmetry withrespect to the laminated body 20 (the mesa section 20M).

After the p-side wiring 41 and the n-side wiring 42 are formed, thepassivation layer 51 is formed by, for example, providing polyimide onthe p-side wiring 41 and the n-side wiring 42 as illustrated in FIGS. 9Aand 9B. In the passivation layer 51, the openings are formed at therespective starting points of the p-side wiring 41 and the n-side wiring42. Next, the UBM layers 61 and 62 are formed by, for instance,electroless plating, at the openings of the passivation layer 51 (FIGS.10A and 10B). Subsequently, the solder bumps 71 and 72 are formed by,for example, plating (FIGS. 11A and 11B). Lastly, the substrate 11 iscut along a scrub line (not illustrated) provided in a central part ofthe protection wall 14, and accordingly the photoelectric converter 1 iscompleted.

In this photoelectric converter 1, a voltage is applied between thep-side electrode 26 and the n-side electrode 23 through signaltransmission via the solder bumps 71 and 72 from the controlsemiconductor chip, and a driving current for laser oscillation flowsfrom the p-side electrode 26 to the n-side electrode 23. At this moment,the current flowing through the upper DBR layer 25 has positive holes,and arrives at the active layer 24 after being confined by the oxidationconfinement section 25A. The positive holes injected into this activelayer 24 are recombined with electrons injected from the n-sideelectrode 23 side and thereby light is emitted. The light isreciprocated between the lower DBR layer 22 and the upper DBR layer 25,and thereby amplified to cause laser oscillation. A laser beam generatedthereby is collimated and extracted by the lens 13, after passingthrough the N—GaAs layer 21 and the substrate 11. Here, the p-sidewiring 41 has the excess wiring section 41B and therefore, deteriorationof the mesa section 20M is suppressed. This will be described below indetail, by using a comparative example.

FIGS. 12A and 12B each illustrate a configuration of a semiconductorlaser device (a semiconductor laser device 200) according to acomparative example. FIG. 12A is a top view of the semiconductor laserdevice 200, and FIG. 12B is a cross-sectional diagram taken along a lineB-B depicted in FIG. 12A. A p-side wiring 141 of this semiconductorlaser device 200 is provided only from a solder bump 71 to a connectionaperture 31HA, and does not have an excess wiring region in a counterregion 141A directly above a laminated body 20. A connection aperture31HB is provided in an extension direction of the p-side wiring 141. Theconnection aperture 31HB (28HB) is provided at each of three corners ofa mesa section 20M, which are not arranged to have point symmetry. Thissemiconductor laser device 200 has an emission lifetime shorter thanthat of a semiconductor laser device without having layers such asinsulating layers 27 and 31, i.e. a semiconductor laser device with noembedment. The reason for this was clarified by the inventors asfollows.

In the semiconductor laser device 200 that produces heat by driving orhas a high temperature due to a rise in the ambient temperature, thermalexpansion of the insulating layers 27 and 31 occurs. A resin, which is amaterial of the insulating layers 27 and 31, has a higher coefficient ofthermal expansion than that of a metal (such as copper and gold) whichis a material of the p-side wiring 141, by about an order of magnitude.Because of this difference in coefficient of thermal expansion, stressis exerted on the mesa section 20M in the extending direction of thep-side wiring 141 (i.e. a direction of the solder bump 71). In otherwords, the mesa section 20M is biased in the direction of the solderbump 71 (i.e. in a direction toward the right on FIG. 12B). This stresscauses moment of a force in a direction biased toward a light emissionregion (an active layer 24) of the mesa section 20M. Therefore, theactive layer 24 deteriorates, thereby reducing the life. In particular,an oxidation confinement section 25A slightly changes in its volume dueto oxidation, thereby generating minute internal stress and thus, itsstrength is likely to be reduced. In the semiconductor laser device in acurrent confinement structure having such a weak oxidation confinementsection 25A, the life tends to become short.

In the semiconductor laser device 2 of the present embodiment, incontrast, the p-side wiring 41 extends from the connection aperture 31HAin the direction opposite to the solder bump 71, and the counter region41A is provided with the excess wiring region 41B. In other words, thep-side wiring 41 is provided to be laid across both sides of theconnection aperture 31HA, and the counter region 41A is closer to asymmetry form. Therefore, stress exerted on the mesa section 20M isoffset on both sides (in a lateral direction of FIG. 1B), and generationof moment of a force in a direction biased toward the active layer 24 issuppressed.

In the present embodiment, as described above, the excess wiring region41B is provided in the counter region 41A of the p-side wiring 41 andthus, exertion of the stress in the biased direction on the mesa section20M is allowed to be suppressed. Therefore, the emission lifetime isallowed to be improved, by preventing the active layer 24 fromdeteriorating due to thermal expansion of the insulating layer 27.

In addition, the connection aperture 31HA is provided at the center ofthe laminated body 20 (the mesa section 20M), and the counter region 41Ahas a point symmetric shape. Thus, stress exerted on each of the bothsides become even, which allows a further improvement in the emissionlifetime. Moreover, the two connection apertures 31HB (the counterregions 42A) of the n-side wiring 42 are provided to be symmetric aboutthe mesa section 20M, and thereby the stress in the biased direction isallowed to be further reduced.

Modification

FIGS. 13A and 13B each illustrate a configuration of a semiconductorlaser device (a semiconductor laser device 2A) according to amodification of the embodiment. FIG. 13A illustrates a planeconfiguration of the semiconductor laser device 2A, and FIG. 13Billustrates a cross-sectional configuration taken along a line B-Bdepicted in FIG. 13A. This semiconductor laser device 2A is differentfrom the semiconductor laser device 2 of the embodiment, in that anexcess wiring section 42B is provided also in the n-side wiring 42.Otherwise, the semiconductor laser device 2A has a configuration, afunction, and effects similar to those of the semiconductor laser device2. The same elements as those of the embodiment will be provided withthe same characters as those of the embodiment, and the descriptionthereof will be omitted.

The excess wiring section 42B is a part extending from the connectionaperture 31HB in the direction opposite to the solder bump 72. In otherwords, the n-side wiring 42 of the semiconductor laser device 2A isprovided to extend from the solder bump 72 beyond the connectionaperture 31HB, to sit across both sides of the connection aperture 31HB.This excess wiring section 42B is provided for each of the twoconnection apertures 31HB. The excess wiring section 42B is provided inproximity to the laminated body 20, in addition to the counter region42A, and has, for example, a length equal to or longer than the radiusof the mesa section 20M. Since the excess wiring section 42B is thusprovided in proximity to the counter region 42A, the stress exerted onthe mesa section 20M not only from directly above but also from aroundis suppressed, and thereby the emission lifetime is allowed to befurther improved.

Application Example

The photoelectric converter described with reference to the embodimentand the like is incorporated in, for example, an optical informationprocessing unit (the optical information processing unit 3) illustratedin FIG. 14.

The optical information processing unit 3 is configured to include anoptical waveguide 320, a light-emission photoelectric converter 330, anda light-receiving photoelectric converter 340. The optical waveguide 320is implemented on a printed circuit board 310. For example, thephotoelectric converter according to the embodiment of the technologymay be used as the light-emission photoelectric converter 330.

The light-emission photoelectric converter 330 and the light-receivingphotoelectric converter 340 are implemented on an interposer 350 bysoldering. The light-emission photoelectric converter 330 and thelight-receiving photoelectric converter 340 are electrically connectedto ICs 371 and 372 via through electrodes 361 and 362 of this interposer350. In this optical information processing unit 3, a laser beam issubjected to signal modulation by a semiconductor laser device of thelight-emission photoelectric converter 330, and this laser beam is thenreceived by a photodiode of the light-receiving photoelectric converter340 through the optical waveguide 320. Such an optical-transmission andcommunication system is applicable to various kinds of locations such asthose between electronic units, between boards in an electronic unit,and between semiconductor chips in a board.

The technology has been described with reference to the embodiment andthe modification, but is not limited thereto and may be variouslymodified. For example, in the embodiment, the semiconductor laser devicehaving the base 12 and the lens 13 on the substrate 11 has beendescribed, but a substrate without the base and the lens may be used.

Further, in the embodiment and the modification, the laminated body 20in a square pillar has been taken as an example, but the laminated body20 may be in other shape. For example, the mesa section 20M shaped likea circular deep groove may be provided.

Furthermore, in the embodiment and the modification, the example inwhich the oxidation confinement section 25A is provided in a part of theupper DBR layer 25 has been described. However, the oxidationconfinement section may be provided in other location, or may beomitted.

In addition, for example, the material and thickness of each layer, orthe film formation methods and film formation conditions described inthe embodiment are not limited. Alternatively, other materials andthicknesses, or other film formation methods and film formationconditions may be adopted.

Further, for example, the configuration of the semiconductor laserdevice has been specifically described in the embodiment, but it is notnecessary to provide all the layers, or other layer may be furtherprovided. Moreover, the arrangement of each layer (section) is notlimited to those of the embodiment and the modification. For example,although the one connection aperture 31HA and the two connectionapertures 31HB are provided in the embodiment, any number of connectionapertures may be provided as long as the effects of the technology areachievable.

Still furthermore, the technology is also applicable to a semiconductorlaser device, other than the AlGaAs-based semiconductor laser device.

Moreover, in the embodiment, the photoelectric converter 1 with thesemiconductor laser device 2, namely, the light emitting unit, has beendescribed as an example. However, the technology may be applied to, forexample, a photoreceiver with a photodiode and the like.

Note that the technology may be configured as follows.

(1) A semiconductor laser device including:

a mesa section including an active layer, and having a first electrodeon a top surface;

an embedding section covering the mesa section, and having a firstconnection aperture that reaches the first electrode; and

-   -   a first wiring provided on the embedding section to be laid        across the first connection aperture, the first wiring being        electrically connected to the first electrode through the first        connection aperture.

(2) The semiconductor laser device according to (1), wherein

the mesa section is columnar, and

-   -   the first wiring extends on both sides of the first connection        aperture, and has a length equal to or longer than a radius of        the mesa section.

(3) The semiconductor laser device according to (1) or (2), wherein

the embedding section has a first insulating layer and a secondinsulating layer,

the mesa section forms a pillar laminated body by being covered with thefirst insulating layer, and

the second insulating layer covers the laminated body.

(4) The semiconductor laser device according to (3), wherein, of thefirst wiring, a region on the laminated body has a substantially pointsymmetry shape, with respect to a point at a center of the mesa section,and, of this region, a part extending from the first connection apertureto one side is an excess wiring section.

(5) The semiconductor laser device according to (3) or (4), furtherincluding:

a second electrode provided in the laminated body, and paired with thefirst electrode;

a second connection aperture provided in the embedding section, andreaching the second electrode; and

a second wiring provided on the embedding section, and electricallyconnected to the second electrode through the second connectionaperture,

wherein, of the second wiring, a region on the laminate body has asubstantially point symmetry shape, with respect to a point at a centerof the mesa section.

(6) The semiconductor laser device according to (5), wherein the secondwiring is provided to be laid across the second connection aperture.

(7) The semiconductor laser device according to any one of (1) to (6),wherein the mesa section is provided above one surface of a transparentsubstrate, and a lens corresponding to the active layer is provided onother surface of the transparent substrate.

(8) The semiconductor laser device according to (7), wherein a base isprovided on the one surface of the transparent substrate, and the mesasection is disposed on the base.

(9) The semiconductor laser device according to any one of (1) to (8),wherein the mesa section includes a first multilayer reflective film,the active layer, a second multilayer reflective film, and a firstelectrode in this order, the second multilayer reflective film having anoxidation confinement section.

(10) The semiconductor laser device according to any one of (1) to (9),wherein a signal is inputted into the first wiring, only from one sideof the first connection aperture in an extending direction of the firstwiring.

(11) A photoelectric converter including a semiconductor laser device,the semiconductor laser device including:

a mesa section including an active layer, and having a first electrodeon a top surface;

an embedding section covering the mesa section, and having a firstconnection aperture that reaches the first electrode; and

a first wiring provided on the embedding section to be laid across thefirst connection aperture, the first wiring being electrically connectedto the first electrode through the first connection aperture.

(12) An optical information processing unit including a semiconductorlaser device and a photodetector of receiving light emitted from thesemiconductor laser device, the semiconductor laser device including:

a mesa section including an active layer, and having a first electrodeon a top surface;

an embedding section covering the mesa section, and having a firstconnection aperture that reaches the first electrode; and

a first wiring provided on the embedding section to be laid across thefirst connection aperture, the first wiring being electrically connectedto the first electrode through the first connection aperture.

The disclosure contains subject matter related to that disclosed inJapanese Priority Patent Application JP 2011-224950 filed in the JapanPatent Office on Oct. 12, 2011, the entire content of which is herebyincorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A surface emitting semiconductor devicecomprising: a semiconductor structure having a mesa structure, thesemiconductor structure comprising an active layer and a distributedBragg reflector (DBR) layer; a first insulating film on a side surfaceand the top surface of the mesa structure, and having a first aperture;a second insulating film on the side surface and the top surface of themesa structure, the first insulating film being between the mesastructure and the second insulating film, the second insulating filmhaving a second aperture; a first wiring on the second insulating film,the first wiring (a) having a length along a first direction equal to orlonger than a radius of the mesa structure along the first direction,(b) being in the first aperture and the second aperture, (c) extendingacross opposite sides of the second aperture along the first directionin a first cross section, and (d) being electrically connected to themesa structure through the first aperture and the second aperture; and asecond wiring including (e) a first portion electrically connected tothe semiconductor structure at a first contact region and (f) a secondportion electrically connected to the semiconductor structure at asecond contact region that is distinct from the first contact region,wherein, the first aperture and the second aperture are between thefirst contact region and the second contact region along a seconddirection perpendicular to the first direction in a plan view, and thesecond wiring extends in a third direction from a bonding portion to themesa structure in the plan view, and the second wiring further includesan excess wiring section that extends beyond a center line of the mesastructure in the third direction, the center line being defined as aline through a center point of the mesa structure and extending to thesecond direction in the plan view.
 2. The surface emitting semiconductordevice according to claim 1, wherein the first portion and the secondportion are electrically connected to each other.
 3. The surfaceemitting semiconductor device according to claim 1, wherein the firstportion and the second portion are contiguously formed as a singlelayer.
 4. The surface emitting semiconductor device according to claim1, wherein the first wiring and the second wiring are on a same side ofthe semiconductor structure.
 5. The surface emitting semiconductordevice according to claim 1, wherein: the first contact region is withina third aperture; the second contact region is within a fourth aperture;and the second wiring extends across opposite sides of the thirdaperture and across opposite sides of the fourth aperture in a secondcross section.
 6. The surface emitting semiconductor device according toclaim 5, wherein the third aperture and the fourth aperture are in thefirst insulating film.
 7. The surface emitting semiconductor deviceaccording to claim 1, further comprising a first electrode on a topsurface of the mesa structure.
 8. The surface emitting semiconductordevice according to claim 1, comprising a passivation film on the firstwiring and the second wiring.
 9. The surface emitting semiconductordevice according to claim 8, wherein the first passivation film is madeof a resin.
 10. The surface emitting semiconductor device according toclaim 1, wherein each of the first insulating film and the secondinsulating film are made of a resin.
 11. A surface emittingsemiconductor device comprising: a semiconductor structure having a mesastructure, the semiconductor structure comprising an active layer and adistributed Bragg reflector (DBR) layer; a first insulating film on aside surface and the top surface of the mesa structure, and having afirst aperture; a second insulating film on the side surface and the topsurface of the mesa structure, the first insulating film being betweenthe mesa structure and the second insulating film, the second insulatingfilm having a second aperture; a first wiring on the second insulatingfilm, the first wiring (a) having a length along a first direction equalto or longer than a radius of the mesa structure along the firstdirection, (b) being in the first aperture and the second aperture, (c)extending across opposite sides of the second aperture along the firstdirection in a cross section, and (d) being electrically connected tothe mesa structure through the first aperture and the second aperture; asecond wiring including (e) a first portion electrically connected tothe semiconductor structure at a first contact region and (f) a secondportion electrically connected to the semiconductor structure at asecond contact region that is distinct from the first contact region, afirst metal wiring electrically connected to the semiconductor structureat a first contact region; and a second metal wiring electricallyconnected to the semiconductor structure at a second contact region thatis distinct from the first contact region, wherein, the first apertureand the second aperture are between the first contact region and thesecond contact region along a second direction perpendicular to thefirst direction in a plan view, and the second wiring extends in a thirddirection from a bonding portion to the mesa structure in the plan view,and the second wiring further includes an excess wiring section thatextends beyond a center line of the mesa structure in the thirddirection, the center line being defined as a line through a centerpoint of the mesa structure and extending to the second direction in theplan view.
 12. The surface emitting semiconductor device according toclaim 11, wherein the first metal wiring and the second metal wiring areelectrically connected to each other and are portions of a secondwiring.
 13. The surface emitting semiconductor device according to claim11, wherein the first metal wiring and the second metal wiring arecontiguously formed as a single layer.
 14. The surface emittingsemiconductor device according to claim 11, wherein the first wiring,the first metal wiring, and the second metal wiring are on a same sideof the semiconductor structure.
 15. The surface emitting semiconductordevice according to claim 11, wherein: the first contact region iswithin a third aperture; the second contact region is within a fourthaperture; and the first metal wiring extends across opposite sides ofthe third aperture and the second metal wiring extends across oppositesides of the fourth aperture in a second cross section.
 16. The surfaceemitting semiconductor device according to claim 11, wherein, at leastthe first metal wiring or the second metal wiring extends in a thirddirection from a bonding portion to the mesa structure in the plan view,and the second wiring further includes an excess wiring section thatextends beyond a center line of the mesa structure in the thirddirection, the center line being defined as a line through a centerpoint of the mesa structure and extending to the second direction in theplan view.
 17. The surface emitting semiconductor device according toclaim 11, wherein each of the first metal wiring and the second metalwiring extends in a third direction from a bonding portion to the mesastructure in the plan view, and the second wiring further includes anexcess wiring section that extends beyond a center line of the mesastructure in the third direction, the center line being defined as aline through a center point of the mesa structure and extending to thesecond direction in the plan view.
 18. The surface emittingsemiconductor device according to claim 11, comprising a passivationfilm on the first wiring, the first metal wring, and the second metalwiring.
 19. An optical information processing device comprising: asubstrate; a light emission device on the substrate; a light receivingdevice on the substrate; a first integrated circuit electricallyconnected to the light emission device; and a second integrated circuitelectrically connected to the light receiving device, wherein, the lightemission device includes a surface emitting semiconductor device, thesurface emitting semiconductor device comprising: a semiconductorstructure having a mesa structure, the semiconductor structurecomprising an active layer and a distributed Bragg reflector (DBR)layer; a first insulating film on a side surface and the top surface ofthe mesa structure, and having a first aperture; a second insulatingfilm on the side surface and the top surface of the mesa structure, thefirst insulating film being between the mesa structure and the secondinsulating film, the second insulating film having a second aperture; afirst wiring on the second insulating film, the first wiring (a) havinga length along a first direction equal to or longer than a radius of themesa structure along the first direction, (b) being in the firstaperture and the second aperture, (c) extending across opposite sides ofthe second aperture along the first direction in a first cross section,and (d) being electrically connected to the mesa structure through thefirst aperture and the second aperture; a second wiring including (e) afirst portion electrically connected to the semiconductor structure at afirst contact region and (f) a second portion electrically connected tothe semiconductor structure at a second contact region that is distinctfrom the first contact region, the first aperture and the secondaperture are between the first contact region and the second contactregion along a second direction perpendicular to the first direction ina plan view; and the second wiring extends in a third direction from abonding portion to the mesa structure in the plan view, and the secondwiring further includes an excess wiring section that extends beyond acenter line of the mesa structure in the third direction, the centerline being defined as a line through a center point of the mesastructure and extending to the second direction in the plan view. 20.The optical information processing device according to claim 19, whereinthe first wiring and the second wiring are on a same side of thesemiconductor structure.
 21. The optical information processing deviceaccording to claim 19, wherein: the first contact region is within athird aperture; the second contact region is within a fourth aperture;and the second wiring extends across opposite sides of the thirdaperture and across opposite sides of the fourth aperture in a secondcross section.
 22. The optical information processing device accordingto claim 19, further comprising a first electrode on a top surface ofthe mesa structure.
 23. The optical information processing deviceaccording to claim 19, comprising a passivation film on the first wiringand the second wiring.
 24. An optical information processing devicecomprising: a substrate; a light emission device on the substrate; alight receiving device on the substrate; a first integrated circuitelectrically connected to the light emission device; and a secondintegrated circuit electrically connected to the light receiving device,wherein, the light emission device includes a surface emittingsemiconductor device, the surface emitting semiconductor devicecomprising: a semiconductor structure having a mesa structure, thesemiconductor structure comprising an active layer and a distributedBragg reflector (DBR) layer; a first insulating film on a side surfaceand the top surface of the mesa structure, and having a first aperture;a second insulating film on the side surface and the top surface of themesa structure, the first insulating film being between the mesastructure and the second insulating film, the second insulating filmhaving a second aperture; a first wiring on the second insulating film,the first wiring (a) having a length along a first direction equal to orlonger than a radius of the mesa structure along the first direction,(b) being in the first aperture and the second aperture, (c) extendingacross opposite sides of the second aperture along the first directionin a first cross section, and (d) being electrically connected to themesa structure through the first aperture and the second aperture; asecond wiring including (e) a first portion electrically connected tothe semiconductor structure at a first contact region and (f) a secondportion electrically connected to the semiconductor structure at asecond contact region that is distinct from the first contact region; afirst metal wiring electrically connected to the semiconductor structureat a first contact region; a second metal wiring electrically connectedto the semiconductor structure at a second contact region that isdistinct from the first contact region; the first aperture and thesecond aperture being between the first contact region and the secondcontact region along a second direction perpendicular to the firstdirection in a plan view; and the second wiring extends in a thirddirection from a bonding portion to the mesa structure in the plan view,and the second wiring further includes an excess wiring section thatextends beyond a center line of the mesa structure in the thirddirection, the center line being defined as a line through a centerpoint of the mesa structure and extending to the second direction in theplan view.
 25. The optical information processing device according toclaim 24, wherein the first metal wiring and the second metal wiring areelectrically connected to each other and are portions of a secondwiring.
 26. The optical information processing device according to claim24, wherein the first metal wiring and the second metal wiring arecontiguously formed as a single layer.
 27. The optical informationprocessing device according to claim 24, wherein the first wiring, thefirst metal wiring, and the second metal wiring are on a same side ofthe semiconductor structure.
 28. The optical information processingdevice according to claim 24, wherein: the first contact region iswithin a third aperture; the second contact region is within a fourthaperture; and the first metal wiring extends across opposite sides ofthe third aperture and the second metal wiring extends across oppositesides of in a second cross section.
 29. The optical informationprocessing device according to claim 24, wherein, in a plan view, atleast the first metal wiring or the second metal wiring extends in athird direction from a bonding portion to the mesa structure in a planview, and the second wiring further includes an excess wiring sectionthat extends beyond a center line of the mesa structure in the thirddirection, the center line being defined as a line through a centerpoint of the mesa structure and extending to the second direction. 30.The optical information processing device according to claim 24, furthercomprising a first electrode on a top surface of the mesa structure. 31.The optical information processing device according to claim 24comprising a passivation film on the first wiring and the first metalwring and the second metal wiring.